NXP Semiconductors - PHP4N60E127

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PHP4N60E127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHP4N60E127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 600 V;
Datasheet PHP4N60E127 Datasheet
In Stock4,087
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Maximum Pulsed Drain Current (IDM): 18 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 2.5 ohm
Avalanche Energy Rating (EAS): 290 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Additional Features: FAST SWITCHING
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