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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | PHP50N06 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; No. of Terminals: 3; |
Datasheet | PHP50N06 Datasheet |
In Stock | 2,534 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 130 ns |
Maximum Drain Current (ID): | 52 A |
Maximum Pulsed Drain Current (IDM): | 208 A |
Surface Mount: | NO |
No. of Terminals: | 3 |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
Maximum Turn Off Time (toff): | 380 ns |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Power Dissipation Ambient: | 150 W |
Maximum Drain-Source On Resistance: | .028 ohm |
Maximum Feedback Capacitance (Crss): | 400 pF |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |