NXP Semiconductors - PHP5N40E

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PHP5N40E by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHP5N40E
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Pulsed Drain Current (IDM): 26 A; Case Connection: DRAIN;
Datasheet PHP5N40E Datasheet
In Stock2,671
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 65 ns
Maximum Drain Current (ID): 6.5 A
Maximum Pulsed Drain Current (IDM): 26 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 100 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 205 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 100 W
Maximum Drain-Source On Resistance: 1 ohm
Avalanche Energy Rating (EAS): 290 mJ
Maximum Feedback Capacitance (Crss): 70 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 400 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 6.5 A
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