PIMC31,115 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PIMC31,115
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
Datasheet	PIMC31,115 Datasheet
In Stock	114,315

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signals
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	70
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.42 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT IN BAIS RESISTOR RATIO IS 10
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
114,315	-	-

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