NXP Semiconductors - PMBF4391,215

PMBF4391,215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMBF4391,215
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-F3;
Datasheet PMBF4391,215 Datasheet
In Stock1,582
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 80 ns
Maximum Drain Current (ID): .012 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 20 ns
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 30 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 3.5 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .012 A
Peak Reflow Temperature (C): 260
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