NXP Semiconductors - PMBT5088TRL

  1. Home
  2. NXP Semiconductors - PMBT5088TRL
PMBT5088TRL by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PMBT5088TRL
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
Datasheet PMBT5088TRL Datasheet
In Stock4,105
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 300
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Maximum VCEsat: .5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,105 - -

Popular Products

Category Top Products

BC547C by Vishay Semiconductors

BC547C

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
MMBT2907A by Weitronic Enterprise

MMBT2907A

Weitronic Enterprise

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMBTA06LT1G by Onsemi

MMBTA06LT1G

Onsemi

MMBTA06LT1G by Onsemi is a NPN BJT transistor with 100 min hFE, 80V VCEO, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating temperature ranges from -55 to 150°C.
BC847B by Dc Components

BC847B

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
2N3904TF by Onsemi

2N3904TF

Onsemi

2N3904TF by Onsemi is a NPN bipolar junction transistor with max. collector-emitter voltage of 40V and max. collector current of 0.2A. It has a min. DC current gain of 30, making it suitable for switching applications with a nominal transition frequency of 300MHz. The package style is cylindrical with matte tin terminal finish, ideal for through-hole mounting in various electronic circuits.
JANTX2N2222AUA by M/a-com Technology Solutions

JANTX2N2222AUA

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 4; Terminal Form: NO LEAD;
2N2222A by Good-ark Electronics

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
BC846-B by Infineon Technologies

BC846-B

Infineon Technologies

BC846-B by Infineon Technologies is a NPN BJT transistor with 200 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 65V and can handle up to 0.1A of collector current. With a transition frequency of 250MHz, it comes in a small outline package ideal for surface mount assembly.
2N2222A by Zetex Plc

2N2222A

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222AUA by Silicon Transistor

JANTX2N2222AUA

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ULN2003AIPWRG4 by Texas Instruments

ULN2003AIPWRG4

Texas Instruments

ULN2003AIPWRG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. This surface-mount transistor in a small outline package is made of silicon with Gull Wing terminals.
2N2222AUA by Silicon Transistor

2N2222AUA

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846BW-7-F by Diodes Incorporated

BC846BW-7-F

Diodes Incorporated

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.
MMBT2222A by Bytesonic Electronics

MMBT2222A

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
MMBT3904 by Diodes Incorporated

MMBT3904

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
SMMBT2222ALT3G by Onsemi

SMMBT2222ALT3G

Onsemi

SMMBT2222ALT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high DC current gain of 75 (hFE), low power dissipation of 0.3W, and fast turn-on/off times of 35ns/285ns. Its Gull Wing terminals and compact rectangular package make it suitable for surface mount designs.
2N2222A by Itt Semiconductor

2N2222A

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Micro Commercial Components

MMBT3906

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
ULN2003AIDR by Texas Instruments

ULN2003AIDR

Texas Instruments

ULN2003AIDR by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications in surface mount designs. The package is rectangular with gull wing terminals, ideal for small outline configurations.
2N2222A by General Transistor

2N2222A

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;