NXP Semiconductors - PMBT5550T/R

  1. Home
  2. NXP Semiconductors - PMBT5550T/R
PMBT5550T/R by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PMBT5550T/R
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .3 A;
Datasheet PMBT5550T/R Datasheet
In Stock255
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .3 A
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 20
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 140 V
Maximum Collector-Base Capacitance: 6 pF
Peak Reflow Temperature (C): 260
Maximum VCEsat: .25 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
255 - -

Popular Products

Category Top Products

JANTX2N2222AUA by Optek Technology

JANTX2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222AUB by Microsemi

2N2222AUB

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;
MMBT2222ALT1 by Onsemi

MMBT2222ALT1

Onsemi

MMBT2222ALT1 by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it has a small outline package and operates b/w -55 to 150°C. With Gull Wing terminals and a peak reflow temp of 235°C, it offers fast turn-on/off times for efficient performance.
BC817-16LT1G by Onsemi

BC817-16LT1G

Onsemi

BC817-16LT1G by Onsemi is a NPN BJT transistor with 3 terminals and a max power dissipation of 0.3W. It has a min DC current gain of 100, operates at temperatures up to 150°C, and can handle a max collector-emitter voltage of 45V. This small outline transistor is ideal for applications requiring high frequency transitions up to 100MHz in surface mount configurations.
MMBT3906 by Diodes Incorporated

MMBT3906

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N3904 by Kodenshi Auk

2N3904

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
BC817,215 by NXP Semiconductors

BC817,215

NXP Semiconductors

BC817,215 by NXP Semiconductors is a NPN BJT transistor with VCEsat of 0.7V and hFE of 100. Ideal for switching applications, it has a max IC of 0.5A and operates at temperatures up to 150°C. With a package style of small outline, it is surface mountable with GULL WING terminals.
MMBT2907A-7-F by Diodes Incorporated

MMBT2907A-7-F

Diodes Incorporated

Diodes Inc. MMBT2907A-7-F is a PNP BJT transistor with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package.
BC547-B by Infineon Technologies

BC547-B

Infineon Technologies

BC547-B by Infineon Technologies is a NPN BJT transistor with a min hFE of 200, ideal for switching applications. It has a max IC of 0.1A and can operate at temperatures up to 150°C. The transistor comes in a cylindrical package with through-hole terminals, making it suitable for various electronic circuits.
BC846B by Vishay Semiconductors

BC846B

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
SBC817-40LT3G by Good-ark Electronics

SBC817-40LT3G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
JANTX2N2222AUA by Semicoa

JANTX2N2222AUA

Semicoa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2222A by Secos

MMBT2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N2222A by Secos

2N2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
BCY89 by NXP Semiconductors

BCY89

NXP Semiconductors

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
BC846BW-7-F by Diodes Incorporated

BC846BW-7-F

Diodes Incorporated

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.
2N2222A by Solid State Devices

2N2222A

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547B by Micro Commercial Components

BC547B

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC547C by Secos

BC547C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;
BC847B,215 by NXP Semiconductors

BC847B,215

NXP Semiconductors

NXP Semiconductors' BC847B,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V, hFE of 200, and can handle a max IC of 0.1A. With a package style of small outline and peak reflow temperature of 260°C, it's ideal for compact electronic devices requiring high-speed switching capabilities.