NXP Semiconductors - PMCM6501VNE

PMCM6501VNE by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMCM6501VNE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: IEC-60134; Peak Reflow Temperature (C): 260; Package Style (Meter): GRID ARRAY;
Datasheet PMCM6501VNE Datasheet
In Stock4,626
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.3 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 12 V
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-PBGA-B6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .022 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
4,626 $0.196 $906.696

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