NXP Semiconductors - PMCM650VNE

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PMCM650VNE by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMCM650VNE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): GRID ARRAY; Package Shape: RECTANGULAR;
Datasheet PMCM650VNE Datasheet
In Stock3,055
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.4 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 12 V
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-PBGA-B6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Reference Standard: IEC-60134
Maximum Drain-Source On Resistance: .032 ohm
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