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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PMD9001D,115 |
| Description | NPN; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 50 V; |
| Datasheet | PMD9001D,115 Datasheet |
| In Stock | 542 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Configuration: | CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Maximum Turn On Time (ton): | 65 ns |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 30 |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 6 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 1307 ns |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |








