NXP Semiconductors - PMD9001D,115

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PMD9001D,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMD9001D,115
Description NPN; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 50 V;
Datasheet PMD9001D,115 Datasheet
In Stock542
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Maximum Turn On Time (ton): 65 ns
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 1307 ns
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
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