NXP Semiconductors - PMD9003D

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PMD9003D by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMD9003D
Description NPN; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Turn Off Time (toff): 1157 ns; Maximum Operating Temperature: 150 Cel;
Datasheet PMD9003D Datasheet
In Stock508
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Maximum Turn On Time (ton): 114 ns
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 1157 ns
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 45 V
Peak Reflow Temperature (C): 260
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