NXP Semiconductors - PMDPB38UNE,115

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PMDPB38UNE,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMDPB38UNE,115
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .51 W; Maximum Drain-Source On Resistance: .061 ohm; No. of Elements: 2;
Datasheet PMDPB38UNE,115 Datasheet
In Stock3,843
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): .51 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Reference Standard: IEC-60134
Maximum Drain Current (Abs) (ID): 5 A
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .061 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
3,843 $0.087 $334.341

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