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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PMDPB56XN,115 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.33 W; Reference Standard: IEC-60134; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | PMDPB56XN,115 Datasheet |
| In Stock | 216 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.1 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 30 V |
| Maximum Power Dissipation (Abs): | 8.33 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Reference Standard: | IEC-60134 |
| Maximum Drain Current (Abs) (ID): | 3.1 A |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .073 ohm |








