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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PMDPB58UPE,115 |
| Description | P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.33 W; Maximum Drain Current (ID): 3.6 A; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | PMDPB58UPE,115 Datasheet |
| In Stock | 3,432 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 3.6 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 8.33 W |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 3.6 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









