NXP Semiconductors - PMDXB550UNE

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PMDXB550UNE by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMDXB550UNE
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY; Terminal Form: NO LEAD;
Datasheet PMDXB550UNE Datasheet
In Stock1,231
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .59 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Reference Standard: IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .9 ohm
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