NXP Semiconductors - PMF250XN,115

PMF250XN,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMF250XN,115
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .34 W; No. of Terminals: 3; Minimum DS Breakdown Voltage: 30 V;
Datasheet PMF250XN,115 Datasheet
In Stock1,668
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .9 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): .34 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Reference Standard: IEC-60134
Maximum Drain Current (Abs) (ID): .9 A
Maximum Drain-Source On Resistance: .3 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
1,668 $0.087 $145.116

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