NXP Semiconductors - PMFPB6532UP,115

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PMFPB6532UP,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMFPB6532UP,115
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Maximum Drain Current (ID): 3.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet PMFPB6532UP,115 Datasheet
In Stock2,812
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 8.3 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.5 A
Maximum Drain Current (Abs) (ID): 3.5 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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