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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PMFPB8040XP,115 |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | PMFPB8040XP,115 Datasheet |
| In Stock | 1,228 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
2156-PMFPB8040XP115 2156-PMFPB8040XP,115-ND NEXNXPPMFPB8040XP,115 2156-PMFPB8040XP115-NXTR-ND |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 3.7 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 6.25 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 3.7 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









