NXP Semiconductors - PMGD130UN,115

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PMGD130UN,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMGD130UN,115
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .39 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet PMGD130UN,115 Datasheet
In Stock1,710
NAME DESCRIPTION
Other Names: 568-10792-1
2156-PMGD130UN115-NXTR-ND
2156-PMGD130UN,115-ND
PMGD130UN,115-ND
2156-PMGD130UN115
NEXNXPPMGD130UN,115
568-10792-6
568-10792-2
934066755115
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.3 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .39 W
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 1.3 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
1,710 $0.120 $205.200

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