NXP Semiconductors - PMN80XP

  1. Home
  2. NXP Semiconductors - PMN80XP
PMN80XP by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PMN80XP
Description Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1;
Datasheet PMN80XP Datasheet
In Stock1,363
NAME DESCRIPTION
Terminal Finish: TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,363 - -

Popular Products

Category Top Products

BSS123L by Motorola

BSS123L

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS314PEH6327XTSA1 by Infineon Technologies

BSS314PEH6327XTSA1

Infineon Technologies

BSS314PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage and 1.5A ID. It features SINGLE configuration with built-in diode, 0.14 ohm RDS(on), and 11pF Crss. Ideal for applications requiring small signal amplification in compact electronic devices due to its ENHANCEMENT MODE operation and GULL WING terminals.
2N7002 by Panjit International

2N7002

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
ZVN3306FTA by Diodes Incorporated

ZVN3306FTA

Diodes Incorporated

ZVN3306FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.15A Drain Current, and 5 ohm On Resistance. It's used in small signal applications due to its PLASTIC/EPOXY package, GULL WING terminals, and ENHANCEMENT MODE operation for efficient performance at up to 150°C.
BSS84 by Lite-on Semiconductor

BSS84

Lite-on Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: 10 ohm; Terminal Form: GULL WING;
NDS0605 by Onsemi

NDS0605

Onsemi

NDS0605 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage and 0.18A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.36W. The small outline package with gull wing terminals makes it suitable for surface mount designs.
SI2302CDS-T1-E3 by Vishay Intertechnology

SI2302CDS-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI2302CDS-T1-E3 is a N-CHANNEL FET with 20V DS Breakdown Voltage and 2.6A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.057 ohm On Resistance, and operates in ENHANCEMENT MODE at up to 150°C.
BS170F by Diodes Incorporated

BS170F

Diodes Incorporated

Diodes Inc.'s BS170F is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 5 ohm Drain-Source On Resistance, and 150°C Max Operating Temp. Ideal for small outline packages requiring low current and high voltage capabilities.
BSS123 by Lite-on Semiconductor

BSS123

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 100 V;
BS170 by Itt Semiconductor

BS170

Itt Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD;
BSS138PW by Nexperia

BSS138PW

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: R-PDSO-G3; Reference Standard: AEC-Q101; IEC-60134;
2N7002T by Fairchild Semiconductor

2N7002T

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Package Style (Meter): SMALL OUTLINE;
FDS4672A by Fairchild Semiconductor

FDS4672A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;
BSS123 by Micro Commercial Components

BSS123

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified;
BSS83PL6327XT by Infineon Technologies

BSS83PL6327XT

Infineon Technologies

BSS83PL6327XT by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage and 0.33A max drain current. It is used in enhancement mode applications, featuring a built-in diode and 2 ohm max on resistance for efficient performance in small outline packages.
BSS138LT3G by Onsemi

BSS138LT3G

Onsemi

BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
NVR5124PLT1G by Onsemi

NVR5124PLT1G

Onsemi

NVR5124PLT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.47W Power Dissipation, and 1.1A Drain Current. Ideal for applications requiring high temperature tolerance up to 150°C, such as automotive electronics due to AEC-Q101 standard compliance.
FDC658P by Fairchild Semiconductor

FDC658P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NDS351AN_NL by Fairchild Semiconductor

NDS351AN_NL

Fairchild Semiconductor

Fairchild Semiconductor's NDS351AN_NL is a small signal FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 1.2A Drain Current, and 0.16 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max temperature of 150°C, making it ideal for various electronic circuits.
FDN304P by Onsemi

FDN304P

Onsemi

FDN304P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.4A and 0.052ohm on-resistance, operating in enhancement mode at up to 150°C. With a small outline package style and matte tin finish, it offers efficient performance in compact designs.