NXP Semiconductors - PMPB16XN,115

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PMPB16XN,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMPB16XN,115
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Maximum Drain-Source On Resistance: .021 ohm; Package Style (Meter): SMALL OUTLINE;
Datasheet PMPB16XN,115 Datasheet
In Stock3,124
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.2 A
Maximum Pulsed Drain Current (IDM): 28 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 6
Maximum Power Dissipation (Abs): 12.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .021 ohm
Other Names: 568-10454-2
568-10454-1
568-10454-6
PMPB16XN,115-ND
2156-PMPB16XN115-NXTR
NEXNXPPMPB16XN,115
934066866115
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Reference Standard: IEC-60134
Maximum Drain Current (Abs) (ID): 10.3 A
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Pricing (USD)

Qty. Unit Price Ext. Price
3,124 $0.087 $271.788

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