NXP Semiconductors - PMR670UPE

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PMR670UPE by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMR670UPE
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G3; Package Style (Meter): SMALL OUTLINE;
Datasheet PMR670UPE Datasheet
In Stock1,022
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .48 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: PURE TIN
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .85 ohm
Moisture Sensitivity Level (MSL): 1
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