NXP Semiconductors - PMT200EPEA

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PMT200EPEA by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMT200EPEA
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
Datasheet PMT200EPEA Datasheet
In Stock3,392
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.4 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 70 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101; IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .167 ohm
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