PMT760EN by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PMT760EN
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
Datasheet	PMT760EN Datasheet
In Stock	4,132

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.9 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	4
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature:	150 Cel
Reference Standard:	IEC-60134
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,132	-	-

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TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;