NXP Semiconductors - PMV65XPTR

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PMV65XPTR by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMV65XPTR
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 20 V;
Datasheet PMV65XPTR Datasheet
In Stock1,563
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.9 A
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOW THRESHOLD
Maximum Drain-Source On Resistance: .076 ohm
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