NXP Semiconductors - PMV90EN

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PMV90EN by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMV90EN
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 1.9 A; JEDEC-95 Code: TO-236AB;
Datasheet PMV90EN Datasheet
In Stock1,062
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.9 A
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: IEC-60134
Maximum Drain-Source On Resistance: .084 ohm
Moisture Sensitivity Level (MSL): 1
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