PMWD16UN,518 by NXP Semiconductors | Miscellaneous Components

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NAME	DESCRIPTION
Other Names:	568-2360-6 PMWD16UN /T3 934057596518 568-2360-1 PMWD16UN518 568-2360-2
Operating Temperature:	-55°C ~ 150°C (TJ)
FET Feature:	Logic Level Gate
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Configuration:	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds:	1366pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:	23.6nC @ 4.5V
Mounting Type:	Surface Mount
Rds On (Max) @ Id, Vgs:	19mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:	700mV @ 1mA
Supplier Device Package:	8-TSSOP
Standard Package:	2,500
Drain to Source Voltage (Vdss):	20V
Series:	TrenchMOS™
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Technology:	MOSFET (Metal Oxide)
Power - Max:	3.1W
Packaging:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Current - Continuous Drain (Id) @ 25°C:	9.9A
Base Product Number:	PMWD16
Moisture Sensitivity Level (MSL):	1 (Unlimited)

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,128	-	-

Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;

RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.