NXP Semiconductors - PMXB56EN

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PMXB56EN by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMXB56EN
Description Small Signal Field-Effect Transistors;
Datasheet PMXB56EN Datasheet
In Stock400
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2N7002W by Changzhou Galaxy Century Microelectronics

2N7002W

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; Package Shape: RECTANGULAR;
BSS138PW by Changzhou Galaxy Century Microelectronics

BSS138PW

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Peak Reflow Temperature (C): 260; JESD-30 Code: R-PDSO-G3;
BSS123W by Yangzhou Yangjie Electronics

BSS123W

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
BSS123IXTSA1 by Infineon Technologies

BSS123IXTSA1

Infineon Technologies

BSS123IXTSA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small signal applications in enhancement mode operation. Package style: Small Outline, Gull Wing terminals, -55 to 150 °C operating temp.
MMBFJ112 by Fairchild Semiconductor

MMBFJ112

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: DEPLETION MODE; No. of Terminals: 3;
2N7002-G by Supertex

2N7002-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH INPUT IMPEDANCE; No. of Elements: 1; Terminal Finish: MATTE TIN;
2N7000 by Secos

2N7000

Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
2N7002PW,115 by Nexperia

2N7002PW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; JESD-609 Code: e3; No. of Elements: 1;
2N7000 by Onsemi

2N7000

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 5 ohm; Qualification: Not Qualified;
2N7002K by Fairchild Semiconductor

2N7002K

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Minimum DS Breakdown Voltage: 60 V; JESD-30 Code: R-PDSO-G3;
2N7002E-T1-GE3 by Vishay Intertechnology

2N7002E-T1-GE3

Vishay Intertechnology

2N7002E-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 0.24A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.35W. The transistor features a built-in diode, Gull Wing terminals, and can withstand temperatures up to 150°C.
LND150N3-GP013 by Microchip Technology

LND150N3-GP013

Microchip Technology

LND150N3-GP013 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, 0.03A ID, and 1000 ohm RDS(on). Ideal for switching applications, it operates in depletion mode with a max temp of 150°C. The transistor features a built-in diode and has a package style of cylindrical.
2N7000 by Lite-on Semiconductor

2N7000

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
2N7002L by Temic Semiconductors

2N7002L

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .8 A; Terminal Position: DUAL; No. of Elements: 1;
2N7000 by Tt Electronics Plc

2N7000

Tt Electronics Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Maximum Drain-Source On Resistance: 5 ohm; Qualification: Not Qualified;
2N7002PS,115 by Nexperia

2N7002PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
FDS4672A by Fairchild Semiconductor

FDS4672A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;
FDG8850NZ by Onsemi

FDG8850NZ

Onsemi

FDG8850NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.75A, on-resistance of 0.4 ohm, and breakdown voltage of 30V. With a small outline package style and operating temp up to 150°C, it's suitable for various electronic devices.
SI4459ADY-T1-GE3 by Vishay Intertechnology

SI4459ADY-T1-GE3

Vishay Intertechnology

SI4459ADY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 29A Drain Current, and 0.005 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals.
2N7002 by Vishay Intertechnology

2N7002

Vishay Intertechnology

2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.