PSMN050-80PS by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PSMN050-80PS
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Package Body Material: PLASTIC/EPOXY; Additional Features: AVALANCHE RATED;
Datasheet	PSMN050-80PS Datasheet
In Stock	4,586

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	22 A
Maximum Pulsed Drain Current (IDM):	88 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	56 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.051 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	18 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	80 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	22 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,586	-	-

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