NXP Semiconductors - PSMN2R5-60PL,127

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PSMN2R5-60PL,127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN2R5-60PL,127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Package Style (Meter): FLANGE MOUNT; Avalanche Energy Rating (EAS): 521.7 mJ;
Datasheet PSMN2R5-60PL,127 Datasheet
In Stock574
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 150 A
Maximum Pulsed Drain Current (IDM): 1002 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 349 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .00315 ohm
Avalanche Energy Rating (EAS): 521.7 mJ
Maximum Feedback Capacitance (Crss): 490 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: IEC-60134
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