NXP Semiconductors - PSMN2R7-30BL

PSMN2R7-30BL by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN2R7-30BL
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: IEC-60134; Maximum Drain Current (ID): 100 A; Moisture Sensitivity Level (MSL): 1;
Datasheet PSMN2R7-30BL Datasheet
In Stock578
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 730 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0037 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 300 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Reference Standard: IEC-60134
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