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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | PSMN9R0-30KL |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4 W; No. of Elements: 1; Qualification: Not Qualified; |
Datasheet | PSMN9R0-30KL Datasheet |
In Stock | 1,861 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 16 A |
Maximum Pulsed Drain Current (IDM): | 64 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | 4 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .013 ohm |
Avalanche Energy Rating (EAS): | 77 mJ |
JEDEC-95 Code: | MS-012AA |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 16 A |