NXP Semiconductors - PTVS13VP1UP,115

PTVS13VP1UP,115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PTVS13VP1UP,115
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet PTVS13VP1UP,115 Datasheet
In Stock364
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Config: SINGLE
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category: Transient Suppressors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W
Technology: AVALANCHE
JESD-30 Code: R-PDSO-F2
Minimum Breakdown Voltage: 14.4 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Polarity: UNIDIRECTIONAL
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Maximum Breakdown Voltage: 15.9 V
Maximum Repetitive Peak Reverse Voltage: 13 V
Maximum Clamping Voltage: 21.5 V
JESD-609 Code: e3
Diode Element Material: SILICON
Qualification: Not Qualified
Nominal Breakdown Voltage: 15.15 V
Reference Standard: AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
364 $0.110 $40.040

Popular Products

Category Top Products