PTVS5V0S1UTR,115 by NXP Semiconductors | Diodes

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PTVS5V0S1UTR,115
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	PTVS5V0S1UTR,115 Datasheet
In Stock	5,720

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category:	Transient Suppressors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	400 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-F2
Minimum Breakdown Voltage:	6.4 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	185 Cel
Moisture Sensitivity Level (MSL):	1
Maximum Breakdown Voltage:	7 V
Maximum Repetitive Peak Reverse Voltage:	5 V
Maximum Clamping Voltage:	9.2 V
JESD-609 Code:	e3
Diode Element Material:	SILICON
Nominal Breakdown Voltage:	6.7 V
Reference Standard:	AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
5,720	-	-

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