NXP Semiconductors - PTVS8V0S1UTR

PTVS8V0S1UTR by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PTVS8V0S1UTR
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet PTVS8V0S1UTR Datasheet
In Stock1,496
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Breakdown Voltage: 9.83 V
Config: SINGLE
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Repetitive Peak Reverse Voltage: 8 V
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Diode Element Material: SILICON
No. of Terminals: 2
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W
Technology: AVALANCHE
JESD-30 Code: R-PDSO-F2
Minimum Breakdown Voltage: 8.89 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Polarity: UNIDIRECTIONAL
Maximum Operating Temperature: 185 Cel
Reference Standard: AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
Moisture Sensitivity Level (MSL): 1
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