NXP Semiconductors - PUMB11T/R

PUMB11T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PUMB11T/R
Description PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Package Shape: RECTANGULAR;
Datasheet PUMB11T/R Datasheet
In Stock2,354
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTOR RATIO IS 1
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