NXP Semiconductors - PUMD9T/R

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PUMD9T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PUMD9T/R
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 4.7;
Datasheet PUMD9T/R Datasheet
In Stock3,072
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 4.7
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