NXP Semiconductors - PUMT1T/R

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PUMT1T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PUMT1T/R
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120;
Datasheet PUMT1T/R Datasheet
In Stock3,996
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .3 W
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 120
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Maximum Collector-Base Capacitance: 2.2 pF
Peak Reflow Temperature (C): 260
Maximum VCEsat: .2 V
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