SA1638BE by NXP Semiconductors | Telecommunications

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	SA1638BE
Description	RF AND BASEBAND CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: LFQFP; Package Shape: SQUARE;
Datasheet	SA1638BE Datasheet
In Stock	212

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	3 V
Maximum Seated Height:	1.6 mm
Sub-Category:	Other Telecom ICs
Surface Mount:	YES
Maximum Supply Current:	24 mA
No. of Terminals:	48
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK, LOW PROFILE, FINE PITCH
Technology:	BIPOLAR
JESD-30 Code:	S-PQFP-G48
Package Shape:	SQUARE
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Package Code:	LFQFP
Width:	7 mm
Telecom IC Type:	RF AND BASEBAND CIRCUIT
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	QFP48,.35SQ,20
Length:	7 mm
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	3/5

Pricing (USD)

Qty.	Unit Price	Ext. Price
212	-	-

The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;