NXP Semiconductors - SA5204AN-T

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Gain: 17 dB; Maximum Operating Frequency: 2800 MHz;

MAR-3SM+ by Mini-circuits is a wideband low power RF amplifier with 8 dB gain, suitable for frequencies ranging from 0 to 2000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, making it ideal for RF and microwave applications requiring high performance in temperature range -20 to 85°C.

Analog Devices' HMC327MS8GTR is a wide band medium power RF amplifier with 5V power supply, operating from -40 to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for RF and microwave applications requiring high performance in compact designs.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOP16(UNSPEC); No. of Functions: 2;

Analog Devices' HMC311SC70ETR is a GAAS RF amplifier with 11dB gain, operating from 0-8000MHz. It has a max input power of 10dBm and requires a 5V supply, making it ideal for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40 to 85°C.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC12,.12SQ,20;

Analog Devices' HMC635LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 18-40 GHz. It features a max input power of 15 dBm and operates on a 5V supply. Ideal for applications requiring high frequency amplification in RF & microwave systems.

Analog Devices' HMC694LP4ETR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and is designed for wideband low-power applications in RF & microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting.

Analog Devices' HMC517LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 17-26 GHz. It has a max input power of 2 dBm and operates on a 3V supply. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

ADL9005ACPZN by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 10 MHz to 26500 MHz. It has a max input power of 22 dBm and VSWR of 1.49, suitable for RF & microwave applications requiring high performance amplification in plastic/epoxy package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 6000 MHz;

Analog Devices' HMC478MP86E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handles up to 5 dBm input power, and has a compact surface mount package ideal for RF applications in temperatures ranging from -40 to 85°C.

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: PHEMT; No. of Functions: 1;

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);