SA615DK/01 by NXP Semiconductors | General Purpose ICs

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	SA615DK/01
Description	AUDIO SINGLE CHIP RECEIVER; Terminal Form: GULL WING; No. of Terminals: 20; Package Code: LSSOP; Package Shape: RECTANGULAR; Package Equivalence Code: SSOP20,.25;
Datasheet	SA615DK/01 Datasheet
In Stock	817

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Seated Height:	1.5 mm
Minimum Supply Voltage (Vsup):	4.5 V
Surface Mount:	YES
Maximum Supply Current:	7.4 mA
No. of Terminals:	20
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
JESD-30 Code:	R-PDSO-G20
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Package Code:	LSSOP
General IC Type:	AUDIO SINGLE CHIP RECEIVER
Width:	4.4 mm
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Package Equivalence Code:	SSOP20,.25
Length:	6.5 mm
Additional Features:	IN-BUILT QUADRATURE DETECTOR
Demodulation Type:	FM
Nominal Signal to Noise Ratio (FM):	68 dB
Nominal Output Voltage (FM):	530 mV
Terminal Pitch:	.65 mm
Maximum Supply Voltage (Vsup):	8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
817	-	-

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BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;