SAA5232T by NXP Semiconductors | General Purpose ICs

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	SAA5232T
Description	TELETEXT AND VPS/PDC DECODER; Terminal Form: GULL WING; No. of Terminals: 24; Package Code: SOP; Package Shape: RECTANGULAR; Width: 7.5 mm;
Datasheet	SAA5232T Datasheet
In Stock	1,228

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Seated Height:	2.65 mm
Minimum Supply Voltage (Vsup):	4.5 V
Surface Mount:	YES
Maximum Supply Current:	72 mA
Nominal Crystal Frequency:	27 MHz
No. of Functions:	1
No. of Terminals:	24
Qualification:	Not Qualified
Terminal Position:	DUAL
Video Input Processor:	NO
Package Style (Meter):	SMALL OUTLINE
Length:	15.4 mm
JESD-30 Code:	R-PDSO-G24
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Package Code:	SOP
External Page Memory Support:	YES
General IC Type:	TELETEXT AND VPS/PDC DECODER
Width:	7.5 mm
Terminal Pitch:	1.27 mm
Maximum Supply Voltage (Vsup):	5.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,228	-	-

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.