SCM6341ZP11A by NXP Semiconductors | Memory ICs

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	SCM6341ZP11A
Description	STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 119; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;
Datasheet	SCM6341ZP11A Datasheet
In Stock	2,141

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	128KX24
Maximum Seated Height:	2.4 mm
Minimum Supply Voltage (Vsup):	3 V
Surface Mount:	YES
No. of Terminals:	119
No. of Words:	131072 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
Technology:	CMOS
JESD-30 Code:	R-PBGA-B119
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	BGA
Width:	14 mm
Memory Density:	3145728 bit
Memory IC Type:	STANDARD SRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	24
No. of Functions:	1
Length:	22 mm
Maximum Access Time:	11 ns
No. of Words Code:	128K
Nominal Supply Voltage / Vsup (V):	3.3
Parallel or Serial:	PARALLEL
Terminal Pitch:	1.27 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,141	-	-

MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;