NXP Semiconductors - SE5205AN-T

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Gain: 9 dB;

WIDE BAND LOW POWER; Technology: GAAS; Gain: 12 dB; Package Equivalence Code: DIE OR CHIP; No. of Functions: 1; Power Supplies (V): 5;

WIDE BAND LOW POWER; Minimum Operating Frequency: 1000 MHz; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT;

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

Analog Devices' HMC462LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 84mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.

WIDE BAND HIGH POWER;

HMC441LP3TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handles up to 15 dBm CW input power, and draws a max of 115 mA at 5 V supply. This component is ideal for RF and microwave applications requiring surface mount construction in the -40°C to +85°C temperature range.

NXP Semiconductors' MW7IC2725NBR1 is a 50 ohm RF amplifier with 25.5 dB gain, operating from 2300-2700 MHz. It can handle up to 22 dBm CW input power and has a VSWR of 10, making it ideal for narrowband high-power applications in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

WIDE BAND LOW POWER; Minimum Operating Temperature: -45 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.9;

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

SGA3563Z by Qorvo is a wide band low power RF amplifier with 19.5 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

Broadcom's MGA-81563-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package, operates at temperatures b/w -40°C to 85°C, and requires a 3V power supply.

SKY67153-396LF by Skyworks Solutions is a wide band low power RF amplifier with 14.5 dB gain and 50 ohm impedance. It operates from 700 MHz to 3800 MHz, handling up to 21 dBm CW input power. Ideal for applications requiring high frequency amplification in temperatures ranging from -40°C to 105°C.

HMC634LC4TR by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5V supply. It has a frequency range of 5-20 GHz, ideal for RF and microwave applications. With ceramic packaging and surface mounting feature, it offers high performance in temperatures ranging from -40 to 85°C.

Qorvo's QPA9121TR7 is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact PLASTIC/EPOXY package and surface mount feature, it's ideal for RF & Microwave systems requiring high performance in temperatures ranging from -40 to 105°C.

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);

AD8350ARMZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.