NXP Semiconductors - SI9925DY

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SI9925DY by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number SI9925DY
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 5 A; Maximum Turn On Time (ton): 70 ns;
Datasheet SI9925DY Datasheet
In Stock60,711
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 70 ns
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 48 A
Surface Mount: YES
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 90 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .045 ohm
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Reference Standard: IEC-60134
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