TEA0675T/V2,518 by NXP Semiconductors | General Purpose ICs

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	TEA0675T/V2,518
Description	DOLBY NOISE REDUCTION IC; Terminal Form: GULL WING; No. of Terminals: 24; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;
Datasheet	TEA0675T/V2,518 Datasheet
In Stock	853

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Seated Height:	2.65 mm
Minimum Supply Voltage (Vsup):	7.6 V
Surface Mount:	YES
Nominal Dolby Level:	387.5 mV
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	24
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	BIPOLAR
JESD-30 Code:	R-PDSO-G24
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
No. of Channels:	2
Package Code:	SOP
General IC Type:	DOLBY NOISE REDUCTION IC
Width:	7.5 mm
Moisture Sensitivity Level (MSL):	3
JESD-609 Code:	e4
Mode (Playback/Record):	PLAYBACK
No. of Functions:	1
Qualification:	Not Qualified
Length:	15.4 mm
Dolby Type:	B
Terminal Pitch:	1.27 mm
Maximum Supply Voltage (Vsup):	12 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
853	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.