NXP Semiconductors - X3A-BFT92

  1. Home
  2. NXP Semiconductors - X3A-BFT92
X3A-BFT92 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number X3A-BFT92
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Emitter Voltage: 15 V;
Datasheet X3A-BFT92 Datasheet
In Stock4,769
NAME DESCRIPTION
Nominal Transition Frequency (fT): 5000 MHz
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): .025 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Highest Frequency Band: C BAND
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,769 - -

Popular Products

Category Top Products

NTE311 by Nte Electronics

NTE311

Nte Electronics

NTE311 by Nte Electronics is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 5W, fT of 800MHz, and hFE of 25, making it suitable for high-frequency signal amplification. The package style is cylindrical with a metal body and wire terminals.
START499ETR by STMicroelectronics

START499ETR

STMicroelectronics

START499ETR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.6 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
NE85633-T1B-A by California Eastern Laboratories

NE85633-T1B-A

California Eastern Laboratories

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
934063513115 by NXP Semiconductors

934063513115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Collector Current (IC): .04 A; JESD-609 Code: e3;
MCH4020-TL-H by Onsemi

MCH4020-TL-H

Onsemi

The Onsemi MCH4020-TL-H is an NPN RF BJT with a max power dissipation of 0.4W, fT of 13GHz, and hFE of 60. Ideal for high-frequency applications in surface-mount configurations, it operates up to 150°C with a max collector current of 0.15A.
HFA3127B by Intersil

HFA3127B

Intersil

Intersil's HFA3127B is an NPN BJT transistor with 5 elements, ideal for amplifier applications in the ultra-high frequency band. With a max fT of 8000 MHz and IC of 0.037 A, this transistor features a Gull Wing terminal form and small outline package style for surface mount assembly.
BFU550XVL by NXP Semiconductors

BFU550XVL

NXP Semiconductors

The NXP Semiconductors BFU550XVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies up to 11GHz. It features a max collector-emitter voltage of 12V, collector current of 0.05A, and a transition frequency of 11GHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
MMBTH10 by Lite-on Semiconductor

MMBTH10

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .05 A; Terminal Position: DUAL;
934067699235 by NXP Semiconductors

934067699235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;
2SC2814 by Onsemi

2SC2814

Onsemi

Onsemi's 2SC2814 is an NPN RF BJT with a max fT of 320 MHz. It has a Pd of 0.15 W and Vceo of 20V, ideal for amplifier applications in the VHF band. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.
934067698235 by NXP Semiconductors

934067698235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
NTE2402 by Nte Electronics

NTE2402

Nte Electronics

NTE2402 by Nte Electronics is an RF BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the ultra-high frequency band up to 5000 MHz, with a max collector-emitter voltage of 15V and a power dissipation of 0.2W. The package is small outline, surface mountable, with Gull Wing terminals.
BF824,215 by NXP Semiconductors

BF824,215

NXP Semiconductors

The NXP Semiconductors BF824,215 is a PNP RF BJT with 3 terminals and max power dissipation of 0.3W. It operates at up to 150°C, has a max collector-emitter voltage of 30V, and fT of 450MHz. Ideal for high-frequency applications in small outline packages requiring low power consumption.
BFR92AW by Vishay Semiconductors

BFR92AW

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Terminal Position: DUAL;
MPS918 by Onsemi

MPS918

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;
JANS2N3866AUB by Semicoa

JANS2N3866AUB

Semicoa

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.9 W; Maximum Collector Current (IC): .4 A; Package Style (Meter): SMALL OUTLINE;
SMA540B by STMicroelectronics

SMA540B

STMicroelectronics

SMA540B by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, a nominal transition frequency of 42GHz, and comes in a compact surface mount package. Ideal for L-band signal amplification.
934067708235 by NXP Semiconductors

934067708235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
2N917 by Texas Instruments

2N917

Texas Instruments

2N917 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and max collector-base capacitance of 1.7pF. Ideal for ultra-high frequency band applications, this single configuration transistor in a cylindrical package is commonly used as an amplifier in electronic circuits.
TIS86 by Texas Instruments

TIS86

Texas Instruments

TIS86 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.4W, DC current gain of 40, and operates at temperatures up to 150°C. The package style is cylindrical with a round shape and wire terminals.