Omron - E2EQ-X8B3D18-M1

E2EQ-X8B3D18-M1 by Omron

Image shown is a representation only.

Manufacturer	Omron
Manufacturer's Part Number	E2EQ-X8B3D18-M1
Description	PROXIMITY SENSOR,INDUCTIVE; Output Type: 3-WIRE DC, PNP, NC/NO; Package Shape or Style: CYLINDRICAL; Termination Type: CONNECTOR; Maximum Operating Temperature: 85 Cel; Housing: FLUORORESIN;
Datasheet	E2EQ-X8B3D18-M1 Datasheet

E2EQ-X8B3D18-M1 Technical Details

NAME	DESCRIPTION
Minimum Supply Voltage:	10 V
Other Names:	236-E2EQ-X8B3D18-M1
Maximum Operating Current:	20 mA
Maximum Measurement Range (mm):	8.8 mm
Maximum Supply Voltage:	30 V
Output Type:	3-WIRE DC, PNP, NC/NO
Housing:	FLUORORESIN
Minimum Operating Temperature:	-40 Cel
Sensors or Transducers Type:	PROXIMITY SENSOR,INDUCTIVE
Package Shape or Style:	CYLINDRICAL
Termination Type:	CONNECTOR
Output Interface Type:	IO-LINK
Additional Features:	IP 67, SHORT CIRCUIT PROTECTION, REVERSE POLARITY PROTECTION
Body Length/Diameter:	18 mm
Maximum Operating Temperature:	85 Cel
Minimum Measurement Range (mm):	0 mm

Popular Products

1N4148

Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;

LD1117S33TR

STMicroelectronics

LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.

LAN8720AI-CP-TR

Microchip Technology

LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.

MBR0520LT1

Motorola

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SMBJ18CA

Fairchild Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2N7002

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;

BSS138

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;

1N4148

Central Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

Category Top Products