Onsemi - 0785-MMBT2484

  1. Home
  2. Onsemi - 0785-MMBT2484
0785-MMBT2484 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 0785-MMBT2484
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
Datasheet 0785-MMBT2484 Datasheet
In Stock1,598
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 250
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,598 - -

Popular Products

Category Top Products

BC817-40 by Panjit International

BC817-40

Panjit International

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: AMPLIFIER;
BC807-40W-7 by Diodes Incorporated

BC807-40W-7

Diodes Incorporated

Diodes Inc. BC807-40W-7 is a PNP BJT transistor with 170 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates up to 150°C with 0.5A IC and 0.2W power dissipation.
JANTX2N2222A by Onsemi

JANTX2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847B-7-F by Diodes Incorporated

BC847B-7-F

Diodes Incorporated

Diodes Inc. BC847B-7-F is a NPN BJT transistor with wing terminals, 200 min hFE, and 45V VCEO. It's used for switching applications in small outline packages with 300MHz fT.
MMBT3904 by Electronic Devices

MMBT3904

Electronic Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
SMMBT3906LT1G by Onsemi

SMMBT3906LT1G

Onsemi

SMMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and IC of 0.2A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance, 260°C peak reflow temp, and 250MHz fT.
BC847C by Rectron

BC847C

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;
2N2905A by Motorola

2N2905A

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel;
2N6517BU by Onsemi

2N6517BU

Onsemi

2N6517BU by Onsemi is a NPN BJT with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used in applications requiring small signal amplification due to its high transition frequency of 40MHz and max. power dissipation of 0.625W in a cylindrical package style.
2N2907AUB by Microsemi

2N2907AUB

Microsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;
2N3055- by Ge Industrial Solutions

2N3055-

Ge Industrial Solutions

Small Signal Bipolar Transistors;
2N2907A by General Transistor

2N2907A

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2222AUB by M/a-com Technology Solutions

2N2222AUB

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDSO-N3; Transistor Element Material: SILICON;
MMBT3904T-7-F by Diodes Incorporated

MMBT3904T-7-F

Diodes Incorporated

Diodes Inc. MMBT3904T-7-F is a NPN BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal amplification in compact electronic devices due to its small outline package and high transition frequency. Suitable for surface mount applications requiring fast switching speeds and low power dissipation.
2N2905A by Hi-tron Semiconductor

2N2905A

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2219A by Siemens

2N2219A

Siemens

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
SMMBT2907ALT3G by Onsemi

SMMBT2907ALT3G

Onsemi

SMMBT2907ALT3G by Onsemi is a PNP BJT with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for small outline applications requiring high DC current gain and fast turn-on/off times. Suitable for automotive electronics due to AEC-Q101 compliance and peak reflow temperature of 260°C.
MMBT2222A by Shanghai Lunsure Electronic Technology

MMBT2222A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: R-PDSO-G3;
BC847B by Itt Semiconductor

BC847B

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC807-40W,115 by Nexperia

BC807-40W,115

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;