Onsemi - 2N491A

  1. Home
  2. Onsemi - 2N491A
2N491A by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2N491A
Description Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;
Datasheet 2N491A Datasheet
In Stock725
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Minimum Valley Point Current: 8 mA
Sub-Category: Unijunction Transistors
Surface Mount: NO
Maximum Inter-base Voltage: 65 V
No. of Terminals: 3
Maximum Peak Point Current: 12 mA
Maximum Power Dissipation (Abs): .45 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 140 Cel
Case Connection: ISOLATED
Maximum Static Inter-Base Resistance: 6.8 kohm
Minimum Intrinsic Stand-off Ratio: .56
Maximum Intrinsic Stand-off Ratio: .68
JEDEC-95 Code: TO-5
Minimum Operating Temperature: -65 Cel
Qualification: Not Qualified
Minimum Static Inter-Base Resistance: 4.7 kohm
Maximum Emitter Current: 70 mA
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
725 - -

Popular Products

Category Top Products

2N4870 by Silicon Group

2N4870

Silicon Group

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Peak Point Current: 5 mA; Minimum Static Inter-Base Resistance: 4 kohm; Maximum Intrinsic Stand-off Ratio: .75;
2N489B by Texas Instruments

2N489B

Texas Instruments

2N489B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, operating temperature range of -65 to 140°C, and max power dissipation of 0.45W. With a package style of cylindrical and isolated case connection, it offers reliable performance in various electronic circuits.
2N493A by Onsemi

2N493A

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JEDEC-95 Code: TO-5; Minimum Operating Temperature: -65 Cel;
2N490B by Texas Instruments

2N490B

Texas Instruments

2N490B by Texas Instruments is a Unijunction Transistor (UFT) with max emitter current of 70mA and max power dissipation of 0.45W. It is used for switching applications, featuring a package shape of ROUND and terminal form WIRE. Operating temperature ranges from -65 to 140 °C.
2N2647 by Texas Instruments

2N2647

Texas Instruments

2N2647 by Texas Instruments is a Unijunction Transistor (UFT) with max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. It is used for switching applications due to its silicon element material and single configuration.
2N4870 by Crimson Semiconductor

2N4870

Crimson Semiconductor

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Transistor Element Material: SILICON;
2N2646 by New Jersey Semiconductor Products

2N2646

New Jersey Semiconductor Products

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Position: BOTTOM; Qualification: Not Qualified;
2N2646 by Thomson Consumer Electronics

2N2646

Thomson Consumer Electronics

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Maximum Emitter Current: 50 mA; Minimum Valley Point Current: 4 mA;
2N2418B by Onsemi

2N2418B

Onsemi

The Onsemi 2N2418B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for low current operations at temperatures ranging from -65 to 140 °C.
NTE6401 by Nte Electronics

NTE6401

Nte Electronics

NTE6401 by Nte Electronics is a Unijunction Transistor (UFT) with max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. Ideal for switching applications due to its silicon element material and static inter-base resistance ranging from 4.7kohm to 9.1kohm.
2N2646 by Space Power Electronics

2N2646

Space Power Electronics

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; JESD-30 Code: O-MBCY-W3;
2N494A by Texas Instruments

2N494A

Texas Instruments

2N494A by Texas Instruments is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. It is used in applications requiring a single configuration transistor for temperature ranges b/w -65 to 140°C.
2N2646 by Semitronics

2N2646

Semitronics

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel;
2N493B by Texas Instruments

2N493B

Texas Instruments

2N493B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. With a package style of cylindrical and terminal form wire, it operates b/w -65 to 140°C effectively.
2N2419B by Onsemi

2N2419B

Onsemi

The Onsemi 2N2419B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for functions like pulse generation or timing circuits.
2N492B by Onsemi

2N492B

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Package Shape: ROUND; Package Body Material: METAL;
2N4870 by Asi Semiconductor

2N4870

Asi Semiconductor

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Emitter Current: 50 mA; Terminal Form: WIRE;
2N2646 by North American Philips Discrete Products Div

2N2646

North American Philips Discrete Products Div

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Intrinsic Stand-off Ratio: .56; Maximum Inter-base Voltage: 35 V; Minimum Static Inter-Base Resistance: 4.7 kohm;
2N4870 by Nte Electronics

2N4870

Nte Electronics

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;
2N2646 by Comset Semiconductors

2N2646

Comset Semiconductors

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Emitter Current: 50 mA; Maximum Peak Point Current: 5 mA; Maximum Inter-base Voltage: 35 V;